Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2009-08-19

2011-12-06

Sandvik, Benjamin (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S176000, C257S900000, C257S903000, C257SE27098

Reexamination Certificate

active

08071448

ABSTRACT:
A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides of the gate electrodes than on the sidewalls along shorter sides of the gate electrodes.

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patent: 2001/0017423 (2001-08-01), Roh et al.
patent: 02-065235 (1990-03-01), None
M. Kanda et al., “Highly Stable 65 nm Node (CMOS5) 0.56 m m2 SRAM Cell Design for Very Low Operation Voltage”, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 13-14.
International Search Report of PCT/JP2007/055351, date of mailing Jun. 19, 2007.

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