Method of fabricating a semiconductor device having a...

Details Method of fabricating a semiconductor device having a... Method of fabricating a semiconductor device having a...

2010-03-01

2011-12-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S227000, C438S228000, C438S508000

Reexamination Certificate

active

08071436

ABSTRACT:
Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described. In some implementations, a method of fabricating a semiconductor device is provided that includes forming an LDMOS transistor having a first drain with a first drain-side n+ region, a first source with a first source-side n+ region and a first source-side p+ region, and a first gate between the first drain and the first source on the substrate. The method also includes forming an n-type CMOS transistor having a second drain having a second drain-side n+ region, a second source having a second source-side n+ region, and a second gate between the second drain and the second source. In so doing, the LDMOS transistor can be fabricated through a process that can be seamlessly integrated into a sub-micron CMOS process.

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