Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2009-01-16
2011-10-11
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S191000, C365S201000
Reexamination Certificate
active
08036051
ABSTRACT:
A semiconductor memory device and a semiconductor memory system. The semiconductor memory device includes channels configured to transmit signals from a transmitter to a receiver, and a crosstalk compensator. The crosstalk compensator may be connected between the channels to compensate for crosstalk. The crosstalk compensator may comprise a capacitor connected in parallel between the channels, and a switching unit connected between the capacitor and one of the channels. The switching unit may control connections or disconnections between the capacitor and the channel. Therefore, the semiconductor memory device and the semiconductor memory system compensate for crosstalk occurring between transmitted signals that are out of phase with each other.
REFERENCES:
patent: 4890022 (1989-12-01), Endo
patent: 7170312 (2007-01-01), Kawasumi
patent: 7864605 (2011-01-01), Lee et al.
patent: 2002/0003444 (2002-01-01), Sasaki
patent: 2007/0047733 (2007-03-01), Bremer et al.
patent: 11-225172 (1999-08-01), None
English language abstract of Japanese Publication No. 11-225172.
Lee Jae-Jun
Park Sung-Joo
Muir Patent Consulting, PLLC
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
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