Semiconductor device capable of suppressing short channel...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S368000, C257S324000, C257SE29300, C257SE29309

Reexamination Certificate

active

08035151

ABSTRACT:
A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has a higher net impurity concentration than the memory channel region.

REFERENCES:
patent: 5473563 (1995-12-01), Suh et al.
patent: 6858899 (2005-02-01), Mahajani et al.
patent: 7042770 (2006-05-01), Lee et al.
patent: 7253467 (2007-08-01), Lee et al.
patent: 2005/0104120 (2005-05-01), Ichige et al.
patent: 2006/0028876 (2006-02-01), Quader et al.
patent: 2006/0180851 (2006-08-01), Lee et al.
patent: 2007/0205445 (2007-09-01), Park et al.
patent: 0 923 139 (1999-06-01), None
patent: 0 923 139 (1999-06-01), None
patent: 2000-068487 (2000-03-01), None
patent: 10-1999-0062796 (1999-07-01), None
patent: 10-2000-0027286 (2000-05-01), None
patent: 10-2007-0002302 (2007-01-01), None
patent: 10-0673020 (2007-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device capable of suppressing short channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capable of suppressing short channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of suppressing short channel... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4256877

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.