Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-16
2011-10-11
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S324000, C257SE29300, C257SE29309
Reexamination Certificate
active
08035151
ABSTRACT:
A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has a higher net impurity concentration than the memory channel region.
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Choi Jung-Dal
Lee Chang-Hyun
Lee & Morse P.C.
Patton Paul
Samsung Electronics Co,. Ltd.
Smith Zandra
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