Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-12-02

2011-11-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S135000, C438S136000, C438S137000, C438S197000, C257S296000, C257S297000, C257S298000, C257S299000

Reexamination Certificate

active

08067289

ABSTRACT:
A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an epitaxial layer over a semiconductor substrate, a first well region over a epitaxial layer, a first isolation layer and/or a third isolation layer at opposite sides of said first well region and/or a second isolation layer over a first well region between first and third isolation layers. A semiconductor device may include a gate over a second isolation layer. A semiconductor device may include a second well region over a first well region between a third isolation layer and a gate, a first ion-implanted region over a second well region between a third isolation layer and a gate, and/or a second ion-implanted region between a first ion-implanted region and a gate. A semiconductor device may include an accumulation channel between a second well region and a gate.

REFERENCES:
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5422508 (1995-06-01), Yilmaz et al.
patent: 5541444 (1996-07-01), Ohmi et al.
patent: 5569937 (1996-10-01), Bhatnagar et al.
patent: 5627385 (1997-05-01), Bhatnagar et al.
patent: 5801078 (1998-09-01), Jimenez
patent: 5869850 (1999-02-01), Endo et al.
patent: 5869875 (1999-02-01), Hebert
patent: 5903032 (1999-05-01), Duvvury
patent: 6117738 (2000-09-01), Tung
patent: 6160290 (2000-12-01), Pendharkar et al.
patent: 6215152 (2001-04-01), Hebert
patent: 6228719 (2001-05-01), Frisina et al.
patent: 6265752 (2001-07-01), Liu et al.
patent: 6310378 (2001-10-01), Letavic et al.
patent: 6380566 (2002-04-01), Matsudai et al.
patent: 6399468 (2002-06-01), Nishibe et al.
patent: 6424005 (2002-07-01), Tsai et al.
patent: 6448625 (2002-09-01), Hossain et al.
patent: 6483149 (2002-11-01), Mosher et al.
patent: 6521920 (2003-02-01), Abe
patent: 6521946 (2003-02-01), Mosher
patent: 6548874 (2003-04-01), Morton et al.
patent: 6559504 (2003-05-01), Nishibe et al.
patent: 6617643 (2003-09-01), Goodwin-Johansson
patent: 6620697 (2003-09-01), Alok et al.
patent: 6670685 (2003-12-01), Pendharkar
patent: 6713794 (2004-03-01), Suzuki
patent: 6727127 (2004-04-01), Darmawan et al.
patent: 6773997 (2004-08-01), Imam et al.
patent: 6876035 (2005-04-01), Abadeer et al.
patent: 6946705 (2005-09-01), Kitaguchi
patent: 6995428 (2006-02-01), Huang et al.
patent: 7148540 (2006-12-01), Shibib et al.
patent: 7173308 (2007-02-01), Kitaguchi
patent: 7192834 (2007-03-01), Hsu et al.
patent: 7268046 (2007-09-01), Letavic et al.
patent: 7473978 (2009-01-01), Matsudai et al.
patent: 7498652 (2009-03-01), Pan et al.
patent: 7554154 (2009-06-01), Hebert
patent: 7602037 (2009-10-01), Lin et al.
patent: 7821062 (2010-10-01), Gossner
patent: 2002/0063266 (2002-05-01), Lee
patent: 2002/0117714 (2002-08-01), Hebert
patent: 2004/0238913 (2004-12-01), Kwon et al.
patent: 2006/0001084 (2006-01-01), Kelly et al.
patent: 2006/0043479 (2006-03-01), Parris et al.
patent: 2007/0080398 (2007-04-01), Lee et al.
patent: 2008/0023785 (2008-01-01), Hebert
patent: 2008/0290410 (2008-11-01), Huang et al.
patent: 2010/0173458 (2010-07-01), You et al.

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