Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-01-27
2010-11-23
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21681, C257SE21679
Reexamination Certificate
active
07838362
ABSTRACT:
The cell comprises a substrate having a drain region and a source region. An oxynitride layer is formed over the substrate. An embedded trap layer is formed over the oxynitride layer. An injector layer is formed over the embedded trap layer. A high dielectric constant layer is formed over the injector layer. A polysilicon control gate formed over the high dielectric constant layer. The cell can be formed in a planar architecture or a two element, split channel, three-dimensional device. The planar cell is formed with the high dielectric constant layer and the control gate being formed over and substantially around three sides of the embedded trap layer. The split channel device has a source line in the substrate under each trench and a bit line on either side of the trench.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Weiss Howard
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