Method for forming conductive structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S618000, C438S622000, C438S687000, C438S629000, C438S672000, C257SE21545, C257SE21546

Reexamination Certificate

active

07833893

ABSTRACT:
A method of forming a method a conductive wire. The method includes forming a dielectric hardmask layer on a dielectric layer; forming an electrically conductive hardmask layer on the dielectric hardmask layer; forming a trench extending through the conductive and dielectric hardmask layers into the dielectric layer; depositing a liner/seed layer on the conductive hardmask layer and the sidewalls and bottom of the trench; filling the trench with a fill material; removing the liner/seed layer from the top surface of the conductive hardmask layer; removing the fill material from the trench; electroplating a metal layer onto exposed surfaces of the conductive hardmask layer and liner/seed layer; and removing the metal layer and the conductive hardmask layer from the dielectric hardmask layer so the metal layer and edges of the liner/seed layer are coplanar with the top surface of the dielectric hardmask layer.

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