Method of synthesizing silicon wires

Details Method of synthesizing silicon wires Method of synthesizing silicon wires

2006-09-22

2010-11-02

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S774000, C977S762000, C977S769000

Reexamination Certificate

active

07825036

ABSTRACT:
A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.

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Young Hwan Kim et al. (Colloids and Surfaces A: Physicochem. Eng. Aspects 284-285 (2006) 364-368).
Ming Liu, Lei-Mei Sheng, Shuai-Ping Ge and Shou-Shan Fan, “Enhanced Field Emission Properties of Vertically-oriented Silicon Nanowire Arrays”, Journal of Vacuum Science and Technology, Jul./Aug. 2005, pp. 312-314, vol. 25, Issue 4, China.
Jian-Gang Liu, Xin-Hui Fan, Jian Chen, Ling-Min Yu and Wen Yan, “Synthesis of Silicon Nanowires by Thermally Evaporating Copper Powders”, Journal of Materials Science & Engineering, Aug. 2005, pp. 589-592, vol. 23, Issue 4, China.

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