Semiconductor image sensor and method for fabricating the same

Details Semiconductor image sensor and method for fabricating the same Semiconductor image sensor and method for fabricating the same

2006-06-21

2010-06-29

Trinh, Hoa B (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S098000, C257S234000, C257SE29325, C348S294000

Reexamination Certificate

active

07745834

ABSTRACT:
A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

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Chinese Office Action, with English translation, issued in Chinese Patent Application No. 200610103157.2, mailed Apr. 24, 2009.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2005-225621, mailed Nov. 24, 2009.

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