Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-12-28

2010-11-09

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S069000, C257S365000, C257S401000, C257S411000

Reexamination Certificate

active

07829953

ABSTRACT:
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate insulating layer of the NMOS region, and a PMOS gate formed on the gate insulating layer of the PMOS region. Any one of the NMOS gate and the PMOS gate includes a one-layered conductive layer pattern, and another of the NMOS gate and the PMOS gate includes a three-layered conductive layer pattern.

REFERENCES:
patent: 6696345 (2004-02-01), Chau et al.
patent: 6790719 (2004-09-01), Adetutu
patent: 6794234 (2004-09-01), Polishchuk et al.
patent: 7019351 (2006-03-01), Eppich
patent: 2004/0023478 (2004-02-01), Samavedam et al.
patent: 2005/0250258 (2005-11-01), Metz et al.
patent: 2008/0029821 (2008-02-01), Yamagami et al.
patent: 2008/0157212 (2008-07-01), Lavoie et al.
patent: 10323013 (2003-11-01), None
patent: 1020020080111 (2002-10-01), None
patent: 1020060083337 (2006-07-01), None
U.S. Patent Application Publication US2003/0203560 A1 corresponds and serves as the English translation for Foreign Reference DE103 23 013 A1.
English Abstract Publication No. 1020060083337.
English Abstract Publication No. 1020020080111.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4248237