Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-10-31
2010-06-15
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568, C438S455000
Reexamination Certificate
active
07736996
ABSTRACT:
A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
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Freeman, Jr. John L.
Theodore Nirmal David
Tracy Clarence J.
Balconi-Lamica Michael J.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Sarkar Asok K
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