Method of manufacturing semiconductor device with recess...

Details Method of manufacturing semiconductor device with recess... Method of manufacturing semiconductor device with recess...

2008-12-08

2010-06-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29270

Reexamination Certificate

active

07741180

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a plurality of recesses in a semiconductor substrate, forming a gate insulating film in the plurality of recesses, and a plurality of gate electrodes on the gate insulating film in the plurality of recesses, forming an insulating layer on the semiconductor substrate and the plurality of gate electrodes, forming a plurality of contact holes in the insulating layer, the contact holes being formed between adjacent ones of the plurality of gate electrodes, implanting a first impurity into the semiconductor substrate through the plurality of contact holes to form each of source and drain regions in contact with the gate insulating film.

REFERENCES:
patent: 7247541 (2007-07-01), Lee et al.
patent: 06-005798 (1994-01-01), None
patent: 08-078682 (1996-03-01), None
patent: 10-050992 (1998-02-01), None
J.Y. Kim et al., “The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88mm feature size and beyond”, Digest of Technical Papers, Symposium on VLSI Technology., pp. 11-12, 2003.

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