Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-25
2010-11-23
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S024000, C257S048000, C977S762000, C977S763000
Reexamination Certificate
active
07838943
ABSTRACT:
A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
International Business Machines - Corporation
Kotulak, Esq. Richard
Nguyen Thinh T
Scully , Scott, Murphy & Presser, P.C.
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