Methods of forming memory cells

Details Methods of forming memory cells Methods of forming memory cells

2007-11-26

2010-06-29

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S527000, C438S530000, C438S593000, C257S324000, C257S411000, C257SE29309, C257SE21180, C977S886000, C977S936000, C977S943000

Reexamination Certificate

active

07745295

ABSTRACT:
Some embodiments include methods of forming memory cells. Dopant is implanted into a semiconductor substrate to form a pair of source/drain regions that are spaced from one another by a channel region. The dopant is annealed within the source/drain regions, and then a plurality of charge trapping units are formed over the channel region. Dielectric material is then formed over the charge trapping units, and control gate material is formed over the dielectric material. Some embodiments include memory cells that contain a plurality of nanosized islands of charge trapping material over a channel region, with adjacent islands being spaced from one another by gaps. The memory cells can further include dielectric material over and between the nanosized islands, with the dielectric material forming a container shape having an upwardly opening trough therein. The memory cells can further include control gate material within the trough.

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