Sidewall memory with self-aligned asymmetrical source and...

Details Sidewall memory with self-aligned asymmetrical source and... Sidewall memory with self-aligned asymmetrical source and...

2006-12-05

2010-06-08

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S257000, C438S202000, C257SE21059, C257SE21619

Reexamination Certificate

active

07732310

ABSTRACT:
A method of forming a semiconductor structure includes providing a semiconductor substrate and forming a memory cell at a surface of the semiconductor substrate. The step of forming the memory cell includes forming a gate dielectric on the semiconductor substrate and a control gate on the gate dielectric; forming a first and a second tunneling layer on a source side and a drain side of the memory cell, respectively; tilt implanting a lightly doped source region underlying the first tunneling layer, wherein the tilt implanting tilts only from the source side to the drain side, and wherein a portion of the semiconductor substrate under the second tunneling layer is free from the tilt implanting; forming a storage on a horizontal portion of the second tunneling layer; and forming a source region and a drain region in the semiconductor substrate.

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