Method of manufacturing a contact structure for a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S759000, C257SE21507, C438S233000, C438S244000, C438S253000, C438S638000, C438S667000

Reexamination Certificate

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07807569

ABSTRACT:
In one embodiment, a semiconductor device comprises a conductive pad formed in a semiconductor substrate. The semiconductor device further includes a conductive pattern overlying a peripheral region of the conductive pad. The conductive pattern has an opening to expose another region of the conductive pad. The semiconductor device also includes a conductive contact extending through the opening. The conductive contact is electrically connected to the conductive pad. As a result, manufacturing cost for the semiconductor device may be reduced while manufacturing throughput may be improved.

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English language abstract of Korean Patent Publication No. 10-0200697.
English language abstract of Korean Patent Publication No. 2002-0065795.
English language abstract of Japanese Patent No. 8-236729.

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