Manufacturing method of flexible semiconductor device and...

Details Manufacturing method of flexible semiconductor device and... Manufacturing method of flexible semiconductor device and...

2008-10-01

2010-12-14

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21414

Reexamination Certificate

active

07851281

ABSTRACT:
A layered film of a three-layer clad foil formed with a first metal layer23, a second metal layer25, and an inorganic insulating layer35interposed therebetween is prepared. After the second metal layer25is partially etched to form a gate electrode20g, the first metal layer23is partially etched to form source/drain electrodes20s,20din a region corresponding to the gate electrode20g. A semiconductor layer40is then formed in contact with the source/drain electrodes20s,20dand on the gate electrode20gwith the inorganic insulating layer35interposed therebetween. The inorganic insulating layer35on the gate electrode20gfunctions as a gate insulating film30, and the semiconductor layer40between the source/drain electrodes20s,20don the inorganic insulating layer35functions as a channel.

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