Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2007-05-21

2010-11-16

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S212000, C438S257000, C257SE29129

Reexamination Certificate

active

07833856

ABSTRACT:
According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a first conductive layer formed as a floating gate on the first insulating layer, a second insulating layer formed as an interelectrode insulating film on the first conductive layer, and comprising three layers of a first film mainly including silicon and oxygen, a second film mainly including silicon and nitrogen, and a third film mainly including silicon and oxygen, wherein a silicon and nitrogen composition ratio of the second film is in a state in which the silicon is in excess of a stoichiometric composition, and a second conductive layer formed as a control gate on the second insulating film.

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Notification of the First Office Action mailed Jul. 25, 2008, from the Chinese Patent Office in counterpart Chinese Application No. 2007101048351.
Notification for Filing Opinion mailed Mar. 11, 2009, from the Korean Patent Office in counterpart Korean Application No. 10-2007-49122, and English language translation thereof.

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