Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2005-09-06
2010-06-15
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257SE33003, C438S168000
Reexamination Certificate
active
07737532
ABSTRACT:
A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l2+m2+n2>i2+j2+k2. Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.
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Chen Hung-Wei
Chi Min-Hwa
Ke Chung-Hu
Ko Chih-Hsin
Lee Wen-Chin
Arora Ajay K
Le Thao X
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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