Memory array structure with strapping cells

Details Memory array structure with strapping cells Memory array structure with strapping cells

2010-02-01

2010-10-12

Andújar, Leonardo (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257SE27099

Reexamination Certificate

active

07812407

ABSTRACT:
A memory array with a row of strapping cells is provided. In accordance with embodiments of the present invention, strapping cells are positioned between two rows of a memory array. The strapping cells provide a P+ strap between N+ active areas of two memory cells in a column and provide an N+ strap between P+ active areas of two memory cells in a column of the memory array. The strapping cells provide an insulating structure between the two rows of the memory array and create a more uniform operation of the memory cells regardless of the positions of the memory cells within the memory array. In an embodiment, a dummy N-well may be formed along the outer edge of the memory array in a direction perpendicular to the row of strapping cells. Furthermore, transistors may be formed in the strapping cells to provide additional insulation between the strapped memory cells.

REFERENCES:
patent: 5111428 (1992-05-01), Liang et al.
patent: 5467305 (1995-11-01), Bertin et al.
patent: 5710448 (1998-01-01), Krautschneider et al.
patent: 5831315 (1998-11-01), Kengeri et al.
patent: 5867434 (1999-02-01), Oh et al.
patent: 6285088 (2001-09-01), Madan
patent: 6731534 (2004-05-01), Fan
patent: 6744106 (2004-06-01), Kanai
patent: 2003/0122160 (2003-07-01), Houston et al.
patent: 2004/0062101 (2004-04-01), Kasuga
patent: 2004/0196705 (2004-10-01), Ishikura et al.
patent: 2004/0238863 (2004-12-01), Liu et al.
patent: 2006/0202361 (2006-09-01), Liaw
patent: 2007/0076491 (2007-04-01), Cherukuri
patent: 2007/0235765 (2007-10-01), Liaw
Radens, C. J. et al. “An Orthogonal 6F2 Trench-Sidewall Vertical Device Cell for 4Gb/16Gb DRAM”. IEEE 2000, pp. 349-352.

Affiliated with

Also associated with

Rating

Memory array structure with strapping cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory array structure with strapping cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory array structure with strapping cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4230310