Semiconductor device having transistors each having gate...

Details Semiconductor device having transistors each having gate... Semiconductor device having transistors each having gate...

2008-02-11

2010-10-19

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S305000

Reexamination Certificate

active

07816213

ABSTRACT:
A semiconductor device with integrated MIS field-effect transistors includes a first transistor containing a first gate electrode having a composition represented by MAx and a second transistor containing a second gate electrode having a composition represented by MAy, wherein M is at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co and Ti; A is silicon and/or germanium; 0<x≦3 and 0<y≦3, and x and y are different from each other.

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