Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-02-11
2010-10-19
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C438S305000
Reexamination Certificate
active
07816213
ABSTRACT:
A semiconductor device with integrated MIS field-effect transistors includes a first transistor containing a first gate electrode having a composition represented by MAx and a second transistor containing a second gate electrode having a composition represented by MAy, wherein M is at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co and Ti; A is silicon and/or germanium; 0<x≦3 and 0<y≦3, and x and y are different from each other.
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McGinn IP Law Group PLLC
Menz Laura M
NEC Electronics Corporation
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