Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-23
2010-06-08
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000, C257SE21649
Reexamination Certificate
active
07732273
ABSTRACT:
A manufacturing method of a semiconductor device having a highly reliable capacitor, and the semiconductor device are provided. The semiconductor device manufacturing method according to the present invention includes: a first step of forming a first electrode of a capacitor on a semiconductor substrate; a second step of forming a capacitor insulating film on the whole surface including a side surface and an upper surface of the first electrode; a third step of forming a protection insulating film made of a material different from that of the capacitor insulating film, on the capacitor insulating film; a fourth step of removing the protection insulating film and the capacitor insulating film from the upper surface of the first electrode, by anisotropically etching the protection insulating film and the capacitor insulating film; a fifth step of removing the protection insulating film that remains on the side surface of the first electrode; and a sixth step of forming a second electrode of the capacitor on the capacitor insulating film, after removing the protection insulating film.
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Elpida Memory Inc.
McDermott Will & Emery LLP
Quach Tuan N.
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