Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-07-06

2010-12-14

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S304000, C257SE27088

Reexamination Certificate

active

07851303

ABSTRACT:
A semiconductor device includes: a transistor having source and drain regions; first and second contact electrodes embedded in a first interlayer insulating film, and electrically connected to the source region and the drain region, respectively; a third electrode embedded in a second interlayer insulating film positioned in an upper layer of the first interlayer insulating film, and electrically connected to the first contact electrode; a wiring pattern embedded in a third interlayer insulating film positioned in an upper layer of the second interlayer insulating film, and electrically connected to the third contact electrode; and a fourth contact electrode embedded in at least the second and third interlayer insulating films, and electrically connected to the second contact electrode, wherein side surfaces of the wiring pattern along an extending direction of the wiring pattern coincide with side surfaces of the third contact electrode along an extending direction of the wiring pattern.

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