Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-06-28
2010-02-09
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S163000, C365S175000
Reexamination Certificate
active
07660181
ABSTRACT:
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a first diode portion, a second diode portion and an antifuse separating the first diode portion from the second diode portion, and forming a second electrode over the at least one nonvolatile memory cell.
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Herner S. Brad
Kumar Tanmay
Foley & Lardner LLP
Pham Ly D
SanDisk 3D LLC
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