Strain silicon wafer with a crystal orientation (100) in...

Details Strain silicon wafer with a crystal orientation (100) in... Strain silicon wafer with a crystal orientation (100) in...

2005-03-17

2010-12-14

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S767000, C257S768000, C257SE21567, C257SE21586, C257SE23012

Reexamination Certificate

active

07851916

ABSTRACT:
A method and system is disclosed for better packaging semiconductor devices. In one example, a semiconductor device package comprises a package substrate, at least one die with an orientation of <100> placed on the substrate with electrical connections made between the package substrate and the die, and an underfill fillet attaching the die to the substrate with the underfill fillet reaching less than 60% of a thickness of the die on at least one side thereof.

REFERENCES:
patent: 3146137 (1964-08-01), Williams
patent: 5970330 (1999-10-01), Buynoski
patent: 6417573 (2002-07-01), Pendse
patent: 6469373 (2002-10-01), Funakura et al.
patent: 7235433 (2007-06-01), Waite et al.
patent: 2002/0121663 (2002-09-01), Azam et al.
patent: 227353 (1994-07-01), None
Taiwan Office Action dated Mar. 6, 2009 from corresponding Taiwan application.

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