Method of forming a nanowire based non-volatile...

Details Method of forming a nanowire based non-volatile... Method of forming a nanowire based non-volatile...

2008-05-15

2010-10-12

Phung, Anh (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179, C257SE21422, C257SE21680, C438S201000, C438S211000, C438S593000, C977S762000, C977S814000, C977S891000, C977S943000

Reexamination Certificate

active

07811883

ABSTRACT:
A non-volatile memory transistor with a nanocrystal-containing floating gate formed by nanowires is disclosed. The nanocrystals are formed by the growth of short nanowires over a crystalline program oxide. As a result, the nanocrystals are single-crystals of uniform size and single-crystal orientation.

REFERENCES:
patent: 5405454 (1995-04-01), Hirai et al.
patent: 6313015 (2001-11-01), Lee et al.
patent: 7045851 (2006-05-01), Black et al.
patent: 7087920 (2006-08-01), Kamins
patent: 7667260 (2010-02-01), Sandhu et al.
patent: 2005/0201149 (2005-09-01), Duan et al.
patent: 2006/0220094 (2006-10-01), Lojek
patent: 2008/0277719 (2008-11-01), Choi et al.
patent: 2008/0308858 (2008-12-01), Sandhu et al.
patent: 2010/0025660 (2010-02-01), Jain et al.
patent: 2010/0112778 (2010-05-01), Sandhu et al.

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