Metal spacer in single and dual damascene processing

Details Metal spacer in single and dual damascene processing Metal spacer in single and dual damascene processing

2008-04-04

2010-02-02

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S597000, C438S598000, C438S618000, C438S622000, C438S637000, C438S639000, C438S669000, C438S672000, C438S675000, C257SE21575, C257SE21577, C257SE21578, C257SE21579, C257SE21585

Reexamination Certificate

active

07655547

ABSTRACT:
A method and structure for a single or dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulator stack, forming troughs in the hardmask, patterning the laminated insulator stack, forming vias in the patterned laminated insulator stack, creating sidewall spacers in the bottom portion of the vias, depositing an anti-reflective coating on the sidewall spacers, etching the troughs, removing the anti-reflective coating, depositing a metal layer in the troughs, vias, and sidewall spacers, and applying conductive material in the troughs and the vias. The laminated insulator stack comprises a dielectric layer further comprising oxide and polyarylene.

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