Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-09-15
2010-02-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S203000, C438S202000
Reexamination Certificate
active
07666732
ABSTRACT:
A method of fabricating a complementary metal oxide semiconductor (CMOS) structure including at least one nFET and at least one pFET located on a surface of a semiconductor substrate is provided. In accordance with the present invention, the nFET and the pFET both include at least a single gate metal and the nFET gate stack is engineered to have a gate dielectric stack having no net negative charge and the pFET gate stack is engineered to have a gate dielectric stack having no net positive charge. In particularly, the present invention provides a method of fabricating a CMOS structure in which the nFET gate stack is engineered to include a band edge workfunction and the pFET gate stack is engineered to have a ¼ gap workfunction.
REFERENCES:
patent: 6686282 (2004-02-01), Simpson et al.
patent: 2004/0256700 (2004-12-01), Ieong et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0233562 (2005-10-01), Adetutu et al.
patent: 2006/0118879 (2006-06-01), Li
patent: 2006/0131652 (2006-06-01), Li
patent: 2006/0246740 (2006-11-01), Cartier et al.
patent: 2006/0270239 (2006-11-01), Triyoso et al.
Doris Bruce B.
Kim Young-Hee
Linder Barry P.
Narayanan Vijay
Paruchuri Vamsi K.
International Business Machines - Corporation
Le Dung A.
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Method of fabricating a metal gate CMOS with at least a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a metal gate CMOS with at least a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a metal gate CMOS with at least a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4219943