Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2010-07-23

2010-12-28

Warren, Matthew E (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S584000, C438S585000, C438S589000, C257SE21050, C257SE21051, C257S331000

Reexamination Certificate

active

07858461

ABSTRACT:
A semiconductor device includes a transistor having a recessed gate, contact plugs formed in a region of a plurality of trenches, which are formed by recessing a semiconductor substrate. Further, a metal line and a source/drain region can be connected through the contact plug, so that on-current can be increased as much as an increased channel area.

REFERENCES:
patent: 2006/0270153 (2006-11-01), Lee
patent: 2006/0286728 (2006-12-01), Kim
patent: 1794467 (2006-06-01), None
patent: 200610054950.8 (2007-01-01), None
patent: 1020050045715 (2005-05-01), None
Chinese Office Action for application No. 200810089862.0, citing the attached reference(s).
Chinese Patent Gazette for application No. 200810089862.0, citing the above reference(s).

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4218920