Trench IGBT for highly capacitive loads

Details Trench IGBT for highly capacitive loads Trench IGBT for highly capacitive loads

2005-10-18

2010-02-02

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S578000, C257S591000, C257SE29027

Reexamination Certificate

active

07655977

ABSTRACT:
An IGBT for controlling the application of power to a plasma display panel has an increased current conduction capability and a reduced conduction loss at the expense of a reduced safe operating area. For a device with a 300 volt breakdown voltage rating, the die has a substrate resistivity less than 10 m ohm cm; a buffer layer thickness of about 8 μm resistivity in the range of 0.05 to 0.10 ohm cm, and an epi layer for receiving junction patterns and trenches, which has a thickness of from 31 to 37 μm and resistivity in te range of 14 to 18 ohm cm.

REFERENCES:
patent: 5262336 (1993-11-01), Pike et al.
patent: 5766966 (1998-06-01), Ng
patent: 6608351 (2003-08-01), Meeuwsen et al.
patent: 6953968 (2005-10-01), Nakamura et al.
patent: 2002/0100935 (2002-08-01), Inoue

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