Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-01
2010-02-23
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21410
Reexamination Certificate
active
07666744
ABSTRACT:
A semiconductor device comprises a plurality of unit cells, each comprising a vertical metal oxide semiconductor field effect transistor (MOSFET). The unit cell includes a first source region formed in a first base region, a second source region formed in the first base region and separated from the first source region, and a second base region formed in the first base region and disposed between the first and second source regions. The semiconductor device further comprises a trench gate formed in a vicinity of each of the plurality of unit cells. The second base region of an unit cell is separated from the second base region of an adjacent unit cell, and the first or second source region of an unit cell is separated from the first or second source region of an adjacent unit cell.
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Monbleau Davienne
NEC Electronics Corporation
Trinh Hoa B
Young & Thompson
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