Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2008-10-24

2010-11-09

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S104000, C438S288000, C438S593000, C257SE21180, C257SE21333, C257SE21680, C977S721000, C977S773000

Reexamination Certificate

active

07829445

ABSTRACT:
Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.

REFERENCES:
patent: 2002/0074565 (2002-06-01), Flagan et al.
patent: 2002/0106850 (2002-08-01), Iguchi et al.
patent: 10-0550452 (2006-02-01), None
patent: 10-2006-0070866 (2006-06-01), None
patent: 10-2006-0113081 (2006-11-01), None
patent: 10-0736850 (2007-07-01), None
patent: WO 2004/010508 (2004-01-01), None

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