Field-effect transistor including localized halo ion...

Details Field-effect transistor including localized halo ion... Field-effect transistor including localized halo ion...

2008-07-08

2010-10-19

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S219000, C257S404000, C257SE21618, C257SE29063

Reexamination Certificate

active

07816734

ABSTRACT:
A field-effect transistor including localized halo ion regions that can optimize HEIP characteristics and GIDL characteristics. The field-effect transistor includes a substrate, an active region, a gate structure, and halo ion regions. The active region includes source/drain regions and a channel region formed at a partial region in the substrate. The gate structure electrically contacts the active region. The halo ion regions are locally formed adjacent to both end portions of the source/drain regions in the substrate.

REFERENCES:
patent: 5534449 (1996-07-01), Dennison et al.
patent: 6743684 (2004-06-01), Liu
patent: 7226843 (2007-06-01), Weber et al.
patent: 2002-0060980 (2002-07-01), None
patent: 2005-0028571 (2005-03-01), None
patent: 2006-0011747 (2006-02-01), None
English language abstract of Korean Publication No. 2002-0060980.
English language abstract of Korean Publication No. 2005-0028571.
English language abstract of Korean Publication No. 2006-0011747.

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