Metal gate high-K devices having a layer comprised of...

Details Metal gate high-K devices having a layer comprised of... Metal gate high-K devices having a layer comprised of...

2009-08-18

2010-12-07

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000, C257S410000, C257S412000, C257SE29255, C257SE27062

Reexamination Certificate

active

07847356

ABSTRACT:
Disclosed is a method to fabricate a semiconductor device, and a device fabricated in accordance with the method. The method includes providing a substrate comprised of silicon; performing a shallow trench isolation process to delineate nFET and pFET active areas and, within each active area, forming a gate structure over a surface of the substrate, the gate structure comprising in order from the surface of the substrate, a layer of high dielectric constant oxide, a layer comprised of a metal, a layer comprised of amorphous silicon, and a layer comprised of polycrystalline silicon. The layer comprised of amorphous silicon is provided to substantially prevent regrowth of the high dielectric constant oxide layer in a vertical direction during at least a deposition and processing of the polycrystalline silicon layer and/or metal layer.

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