Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-08-26
2010-10-12
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S706000
Reexamination Certificate
active
07811926
ABSTRACT:
Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.
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Dalton Timothy J.
Fuller Nicholas C. M.
Gates Stephen McConnell
International Business Machines - Corporation
Menz Laura M
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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