Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-09-16
2010-10-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S591000, C438S763000, C257SE21625, C257SE21639
Reexamination Certificate
active
07816215
ABSTRACT:
A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.
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Eguchi Kazuhiro
Inumiya Seiji
Kato Koichi
Matsushita Daisuke
Muraoka Koichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Jefferson Quovaunda
Kabushiki Kaisha Toshiba
Smith Matthew
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