Methods of forming and programming floating-gate memory...

Details Methods of forming and programming floating-gate memory... Methods of forming and programming floating-gate memory...

2009-01-26

2010-12-14

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S264000, C438S154000

Reexamination Certificate

active

07851292

ABSTRACT:
Floating-gate memory cells having carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitate ballistic injection of charge into the floating gate. The carbon nanotubes may extend across the entire channel region or a portion of the channel region. For some embodiments, the carbon nanotubes may be concentrated near the source/drain regions. For some embodiments, the tunnel dielectric layer may adjoin the substrate in at least a portion of the channel region.

REFERENCES:
patent: 4896098 (1990-01-01), Haritonidis et al.
patent: 6858521 (2005-02-01), Jin
patent: 6944054 (2005-09-01), Rueckes et al.
patent: 6995046 (2006-02-01), Rueckes et al.
patent: 6998634 (2006-02-01), Cheong et al.
patent: 7262991 (2007-08-01), Zhang et al.
patent: 2004/0027889 (2004-02-01), Occhipinti et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0160812 (2004-08-01), Rinerson et al.
patent: 2005/0051805 (2005-03-01), Kim et al.
patent: 2005/0174842 (2005-08-01), Bertin et al.
patent: 2006/0011972 (2006-01-01), Graham et al.
patent: 2007/0014151 (2007-01-01), Zhang et al.

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