Post-CMP treating liquid and manufacturing method of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S639000, C438S691000, C438S693000, C257SE21585

Reexamination Certificate

active

07655559

ABSTRACT:
A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

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patent: 2008/0216415 (2008-09-01), Kurashima et al.
U.S. Appl. No. 11/967,584, filed Dec. 31, 2007, Kurashima, et al.

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