Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-24
2010-02-02
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S691000, C438S693000, C257SE21585
Reexamination Certificate
active
07655559
ABSTRACT:
A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
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Kurashima Nobuyuki
Minamihaba Gaku
Yano Hiroyuki
Kabushiki Kaisha Toshiba
Lebentritt Michael S
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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