Method of preparing a semiconductor substrate utilizing...

Details Method of preparing a semiconductor substrate utilizing... Method of preparing a semiconductor substrate utilizing...

2006-01-31

2010-02-16

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S420000, C438S433000, C438S529000, C257SE21544

Reexamination Certificate

active

07662690

ABSTRACT:
Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The blanket implantations are performed through isolation regions in the substrate so that the p type dopants are implanted to depths sufficient to separate the nwell regions. This increased concentration of p type dopants helps to mitigate leakage between the nwell regions as the nwell regions are brought closer together to increase packing densities.

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patent: 5814866 (1998-09-01), Borland
patent: 2002/0109196 (2002-08-01), Fujisawa et al.
patent: 2004/0097051 (2004-05-01), Wu et al.
patent: 2004/0169236 (2004-09-01), Sridhar et al.

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