Semiconductor device having a fuse

Details Semiconductor device having a fuse Semiconductor device having a fuse

2005-03-22

2010-02-23

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21109

Reexamination Certificate

active

07666734

ABSTRACT:
A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse element made of refractive metal and bridging the fuse terminals. The fuse element is formed as a common layer with the protective cover films covering the interconnect lines.

REFERENCES:
patent: 6100118 (2000-08-01), Shih et al.
patent: 6777318 (2004-08-01), Jeng et al.
patent: 2003/0052440 (2003-03-01), Tsuura
patent: 2004/0067623 (2004-04-01), Chuang
patent: H08-213465 (1996-08-01), None
patent: H11-017011 (1999-01-01), None
patent: H11-224900 (1999-08-01), None
patent: 2000-012691 (2000-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having a fuse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a fuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a fuse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4200218