Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-09-25

2010-06-08

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21422, C257SE21626

Reexamination Certificate

active

07732277

ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate; an isolation structure formed in a trench, formed in the semiconductor substrate, through a semiconductor oxide film; a floating gate formed on the semiconductor substrate between the isolation structures through an insulating film; a gate oxidation protection film formed on a side surface, on the isolation structure side, of the floating gate so that each of a part of a side surface and a bottom surface of the gate oxidation protection film contacts the insulating film; and a control gate formed on the floating gate through an inter-gate insulating film.

REFERENCES:
patent: 7060559 (2006-06-01), Ozawa et al.
patent: 7259421 (2007-08-01), Hur et al.
patent: 2002/0117706 (2002-08-01), Shimizu
patent: 2004/0099900 (2004-05-01), Iguchi et al.
patent: 2004/0159886 (2004-08-01), Lee et al.
patent: 2005/0245029 (2005-11-01), Choi et al.
patent: 2001-144170 (2001-05-01), None
patent: 2004-186185 (2004-07-01), None

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