Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-03-12

2010-12-28

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S565000, C438S655000

Reexamination Certificate

active

07858462

ABSTRACT:
A method of manufacturing a semiconductor device including an NMOS transistor and a PMOS transistor is provided. The method includes: forming a silicon layer over a substrate through a gate insulating film; forming a first gate electrode and a second gate electrode by patterning the silicon layer, the first gate electrode being a gate electrode of the NMOS transistor, and the second gate electrode being a gate electrode of the PMOS transistor; selectively forming a silicon oxide film on the first gate electrode which is formed of silicon; after the selectively forming the silicon oxide film, forming a first metallic layer formed of a metal capable of forming a silicide over the first and second gate electrodes; and performing a first heat treatment such that a first silicide layer of a silicide of the first metallic layer is formed.

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