Phase change memory device and method of forming the same

Details Phase change memory device and method of forming the same Phase change memory device and method of forming the same

2006-08-22

2010-02-23

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C257S002000, C257SE21536, C257SE29143, C438S382000

Reexamination Certificate

active

07667998

ABSTRACT:
A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.

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