Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2010-12-21
Fahmy, Wael M (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S669000, C438S670000, C257SE21023, C257SE21026, C257SE21027
Reexamination Certificate
active
07855146
ABSTRACT:
A method for forming a transistor gate includes performing a first exposure of a photo-resist material on a semiconductor device. The first exposure defines a line pattern in the photo-resist material. The method also includes performing a second exposure of the photo-resist material, where the second exposure trims a resist profile of the line pattern. The method further includes etching a conductive material on the semiconductor device to form a transistor gate based on the line pattern. The first exposure could represent a best focus exposure of the photo-resist material, and the second exposure could represent a positive focus exposure of the photo-resist material. The trimming of the line pattern's resist profile may cause the transistor gate to have at least one of a rounded edge and a rounded corner. This may allow a thicker insulating material, such as tetraethylorthosilicate, to be deposited around portions of the transistor gate.
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Bu Jiankang
Chou Li-Heng
Fahmy Wael M
National Semiconductor Corporation
Yang Minchul
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