Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-23
2010-10-12
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S440000
Reexamination Certificate
active
07812381
ABSTRACT:
There is provided a CMOS image sensor and an electronic product using the same. The CMOS image sensor includes a plurality of pixels for embodying colors having different wavelengths. Each of pixels includes a buried barrier layer disposed in a semiconductor substrate and having a barrier potential energy of a conduction band thereof at an equilibrium state, a first layer disposed at a main surface of the semiconductor substrate separated from the buried barrier layer in a vertical direction and having a first potential energy of a conduction band thereof at the equilibrium state, and a second layer disposed between the first region and the buried barrier layer having a second potential energy of a conduction band thereof at the equilibrium state. The second potential energy is higher than the first potential energy and the barrier potential energy and a thickness of the second layer is thicker as the wavelength is longer.
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Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Tran Thien F
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