Method of making a semiconductor device having high voltage...

Details Method of making a semiconductor device having high voltage... Method of making a semiconductor device having high voltage...

2007-01-26

2010-10-19

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S258000, C257SE21625, C257SE21689

Reexamination Certificate

active

07816211

ABSTRACT:
A semiconductor device is made on a semiconductor substrate. A first insulating layer is formed on the semiconductor substrate for use as a gate dielectric for a high voltage transistor in a first region of the semiconductor substrate. After the first insulating layer is formed, a second insulating layer is formed on the semiconductor substrate for use as a gate dielectric for a non-volatile memory transistor in a second region of the substrate. After the second insulating layer is formed, a third insulating layer is formed on the semiconductor substrate for use as a gate dielectric for a logic transistor in a third region of the substrate.

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patent: 2003/0080436 (2003-05-01), Ishikawa
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patent: 2005/0059213 (2005-03-01), Steimle et al.
patent: 2005/0287729 (2005-12-01), Steimle
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patent: 2006/0194438 (2006-08-01), Rao et al.
patent: 1020060057958 (2006-05-01), None
PCT Search report and Written Opinion for corresponding PCT Application No. PCT/US08/50697 mailed May 22, 2008.

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