Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-11-10

2010-11-16

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07833867

ABSTRACT:
A sacrifice oxide film is formed in a Fin semiconductor substrate portion, and impurities are then implanted in the semiconductor substrate through a mask pattern as a mask. Thereafter, the sacrifice oxide film is removed to expose the semiconductor substrate. A gate insulating film is then formed on the exposed semiconductor substrate.

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