Manufacturing method of semiconductor device and electronic...

Details Manufacturing method of semiconductor device and electronic... Manufacturing method of semiconductor device and electronic...

2008-04-28

2010-12-14

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S164000, C438S149000, C438S651000, C438S682000, C257SE21199, C257SE21438, C257SE21619, C257S382000

Reexamination Certificate

active

07851352

ABSTRACT:
Silicide films with high quality are formed with treatment of laser light irradiation, so that miniaturization and higher performance is achieved in a field-effect transistor that is formed over an insulating substrate and has little variation in electric characteristics. An island-shaped semiconductor film including a pair of impurity regions and a channel formation region is formed over an insulating substrate, a first metal film is formed on the pair of impurity regions, and a second metal film that functions as a reflective film is formed over a gate electrode located over the channel formation region with a gate insulating film interposed therebetween. The first metal film is irradiated with laser light and a region where the second metal film is formed reflects the laser light, so that the island-shaped semiconductor film and the first metal film selectively react with each other in the pair of impurity regions.

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