Semiconductor device with channel of FIN structure and...

Details Semiconductor device with channel of FIN structure and... Semiconductor device with channel of FIN structure and...

2008-06-27

2010-11-02

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27091

Reexamination Certificate

active

07824979

ABSTRACT:
Provided are a semiconductor device with a channel of a FIN structure and a method for manufacturing the same. In the method, a device isolation layer defining an active region is formed on a semiconductor substrate. A recess trench with a first width is formed in the active region, and a trench with a second width larger than the first width is formed in the device isolation layer. The trench formed in the device isolation layer is filled with a capping layer. A cleaning process is performed on the recess trench to form a bottom protrusion of a FIN structure including a protrusion and a sidewall. Gate stacks filling the recess trench are formed. A landing plug, which is divided by the capping layer filling the trench, is formed between the gate stacks.

REFERENCES:
patent: 7074662 (2006-07-01), Lee et al.
patent: 2005/0170593 (2005-08-01), Kang et al.
patent: 2007/0170522 (2007-07-01), Lee et al.
patent: 2008/0105900 (2008-05-01), Joshi et al.
patent: 2008/0111194 (2008-05-01), Kawakita
patent: 10-2004-0059753 (2004-07-01), None
patent: 10-2004-0072267 (2004-08-01), None
patent: 10-2008-0010661 (2008-01-01), None
patent: 10-2008-0029637 (2008-04-01), None

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