Immersion fluids for lithography

Details Immersion fluids for lithography Immersion fluids for lithography

2007-05-29

2010-06-29

Kelly, Cynthia H (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

Reexamination Certificate

active

07745102

ABSTRACT:
Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 μm−1, or lower than about 1 μm−1, or lower than about 0.5 μm−1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.

REFERENCES:
patent: 4108794 (1978-08-01), Yonekubo
patent: 4677049 (1987-06-01), Griffing et al.
patent: 2004/0009425 (2004-01-01), French et al.
patent: 2004/0137361 (2004-07-01), French et al.
patent: 2004/0175647 (2004-09-01), French et al.
patent: 2005/0024609 (2005-02-01), De Smit et al.
patent: 2005/0029180 (2005-02-01), Kimisawa
patent: 2005/0122497 (2005-06-01), Lyons et al.
patent: 2005/0145821 (2005-07-01), French et al.
patent: 2005/0161644 (2005-07-01), Zhang et al.
patent: 2005/0164522 (2005-07-01), Kunz et al.
patent: 2005/0186513 (2005-08-01), Letz et al.
patent: 2005/0186514 (2005-08-01), French et al.
patent: 2007/0164261 (2007-07-01), Miyamatsu et al.
patent: 2007/0296939 (2007-12-01), Nishii
patent: 2009/0011375 (2009-01-01), Hirayama et al.
patent: 2009/0081594 (2009-03-01), Chen et al.
patent: 07-242675 (1995-09-01), None
patent: 07-247293 (1995-09-01), None
patent: 07-330782 (1995-12-01), None
patent: 2756410 (1998-05-01), None
patent: WO 2005/114711 (2005-12-01), None
patent: WO 2005/117074 (2005-12-01), None
Invitation to Pay Addtl Fees with Partial International Search, from corresponding PCT/US07/012648, mailed Mar. 14, 2008.
Irisawa et al., “The Modeling of Immersion Liquid by Using Quantum Chemical Calculation,” Proc. SPIE 5754(1):1040-48 (2004).
Froberger, C.F., “Synthesis of Tetra(perfluoroalkoxy)silanes,” J. Organic Chem. 25:311 (1960).

Affiliated with

Also associated with

Rating

Immersion fluids for lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Immersion fluids for lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Immersion fluids for lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4186627